isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK4A80E，ITK4A80E
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤3.
5Ω.
·Enhancement mode:
Vth = 2.
5 to4.
0V (VDS = 10 V, ID=0.
4mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
4.
0
IDM
Drain Current-Single Pulsed
12
PD
Total Dissipation @TC=25℃
35
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTIC...