iscN-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK4R3A06PL,ITK4R3A06PL
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 3.
3mΩ (typ.
) (VGS = 10 V) ·Enhancement mode:
Vth = 1.
5 to 2.
5V (VDS = 10 V, ID=0.
5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
68
IDM
Drain Current-Single Pulsed
350
PD
Total Dissipation @TC=25℃
36
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ...