| Part Number | TK6A80E |
| Manufacturer | Toshiba |
| Title | N-Channel MOSFET |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA)
3. Packaging and Internal Circuit
TK6A80E
TO-220SIS
1: Gate 2: Drain 3: Source
Start of commercial production
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| File Size | 270.66KB |
| Datasheet |
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TK6A80E : isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK6A80E，ITK6A80E ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.7Ω. ·Enhancement mode: Vth = 2.5 to 4.0V (VDS = 10 V, ID=0.6mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS.