isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK6Q60W，ITK6Q60W
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤820mΩ.
·Enhancement mode:
Vth =2.
7 to 3.
7V (VDS = 10 V, ID=0.
31mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
6.
2
IDM
Drain Current-Single Pulsed
24.
8
PD
Total Dissipation @TC=25℃
60
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERI...