MOSFETs Silicon N-channel MOS (U-MOS�-H)
TK8R2E06PL
1.
Applications
• High-Efficiency DC-DC Converters • Switching Voltage
Regulators • Motor Drivers
2.
Features
(1) High-speed switching (2) Small gate charge: QSW = 9.
7 nC (typ.
) (3) Small output charge: Qoss = 23 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 6.
1 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 0.
3 mA)
3.
Packaging and Internal Circuit
TK8R2E06PL
TO-220
1: Gate 2: Drain (heatsink) 3: Source
©2016-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2016-10
2021-02-02 Rev.
3.
0
TK8R2E06PL...