iscN-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK20A25D,ITK20A25D
·FEATURES ·Low drain-source on-resistance:
RDS(on) = 0.
073Ω (typ.
) ·Enhancement mode:
Vth = 1.
5 to 3.
5V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
250
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
20
IDM
Drain Current-Single Pulsed
80
PD
Total Dissipation @TC=25℃
45
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHAR...