Part Number
|
TK30E06N1 |
Manufacturer
|
INCHANGE |
Description
|
N-Channel MOSFET |
Published
|
Oct 4, 2020 |
Datasheet
|
TK30E06N1
|
Features
·Low drain-source on-resistance:
RDS(on) ≤15.0mΩ. (VGS = 10 V) ·Enhancement mode:
Vth =2.0 to 4.0V (VDS = 10 V, ID=0.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switchi...
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