isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK65E10N1，ITK65E10N1
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤4.
8mΩ.
(VGS = 10 V) ·Enhancement mode:
Vth =2.
0 to 4.
0V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
65
IDM
Drain Current-Single Pulsed
296
PD
Total Dissipation @TC=25℃
192
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THE...