isc N-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5.
9mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·DC/DC Converters in Computing ·Isolated DC/DC Converters in Telecom and Industrial
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
46
IDM
Drain Current-Single Pulsed
163
PD
Total Dissipation @TC=25℃
50
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-cas...