IPB05CN10N G IPI05CN10N G IPP05CN10N G
OptiMOS®2 Power-
Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max (TO 263) ID
100 V 5.
1 mΩ 100 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
Package Marking
PG-TO263-3 05CN10N
PG-TO262-3 05CN10N
PG-TO220-3 05CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 ...