| Part Number | IPP057N06N3 |
| Manufacturer | Infineon |
| Title | Power-Transistor |
| Description | Ie\Q IPB054N06N3 G IPP057N06N3 G "%&$!"#™3 Power-Transistor Features Q#4516? B8978 6B5AE53 I CG9D3 897 14 CI3 B53 Q( @D9=9J54 D53 8? ... |
| Features |
Q#4516? B8978 6B5AE53 I CG9D3 897 14 CI3
B53
Q( @D9=9J54 D53 8? ? 7I 6? B 3 ? F5BD5BC Q H3 55D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q' 3 815 ? B=15F5 Q
1F113 85 D5CD54 Q) 2 6B55 @1D97 + ? " , 3 ? =@91D Q* E196954 13 3 ? B497 D? $ )# 6? BD1B75...
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| File Size | 689.58KB |
| Datasheet |
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IPP057N06N3 : ·Ideal for high frequency switching ·Optimized technology for DC/DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 115 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.3 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP057N06N3， IIPP0.
IPP057N06N3G : Ie\Q IPB054N06N3 G IPP057N06N3 G "%&$!"#™3 Power-Transistor Features Q#4516? B8978 6B5AE53 I CG9D3 897 14 CI3 B53 Q( @D9=9J54 D53 8? ? 7I 6? B 3 ? F5BD5BC Q H3 55D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q' 3 815 ? B=15F5 Q 1F113 85 D5CD54 Q) 2 6B55 @1D97 + ? " , 3 ? =@91D Q* E196954 13 3 ? B497 D? $ )# 6? BD1B75D1@@93 1D9? C Q" 1? 75 6B55 13 3 ? B497 D? # Product Summary V 9H R , ? =1H, & I9 Type #) ' ' ! #) ) ' ' ! .( J -&, Y" 0( 6 Package Marking E=%ID*.+%+ (-,C(.C E=%ID**(%+ (-/C(.C Maximum ratings, 1DT V T E5CC? D85BG9C5 C@53 96954 Parameter Symbol Co.