IPB051NE8N G IPI05CNE8N G IPP054NE8N G
OptiMOS™2 Power-
Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max (TO 263) ID
85 V 5.
1 mΩ 100 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB051NE8N G
IPI05CNE8N G
IPP054NE8N G
Package Marking
PG-TO263-3 051NE8N
PG-TO262-3 05CNE8N
PG-TO220-3 054NE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditi...