| Part Number | IPB320N20N3G |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | Isc N-Channel MOSFET Transistor IPB320N20N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resist... |
| Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE ... |
| File Size | 254.03KB |
| Datasheet |
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IPB320N20N3 : IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID 200 V 32 mΩ 34 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G Package Marking PG-TO263-3 320N20N PG-TO220-3 320N20N PG-TO262-3 320N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions .
IPB320N20N3G : IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification 200 V 32 mΩ 34 A Type IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G Package Marking PG-TO263-3 320N20N PG-TO220-3 320N20N PG-TO262-3 320N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions .