Isc P-Channel MOSFET
Transistor
·FEATURES ·With SOT-23 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±12
ID
Drain Current-ContinuousTc=25℃ Tc=70℃
-0.
78 -0.
26
IDM
Drain Current-Single Pulsed
-4.
9
PD
Total Dissipation @TC=25℃
540
Tch
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A
mW ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-a) Channel-...