isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.
7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting
equipment ideal for monitor’s B+ function
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
12
A
IDM
Pulsed drain current
24
A
Ptot
Total Dissipation@T...