isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
20
IDM
Drain Current-Single Pulsed
80
PD
Total Dissipation
45
Tj
Operating Junction Temperature
150
Tstg
Storage Temperature
-65~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel...