Isc N-Channel MOSFET
Transistor
UT20N03
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
20
IDM
Drain Current-Single Pulsed
120
PD
Total Dissipation @TC=25℃
60
Tch
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case th...