| Part Number | R8005ANX |
| Manufacturer | ROHM |
| Title | Power MOSFET |
| Description | R8005ANX Nch 800V 5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD Features 1) Low on-resistance. 800V 2.08 5A 51W Outline TO-220FM In... |
| Features |
1) Low on-resistance.
800V 2.08
5A 51W
Outline TO-220FM Inner circuit (1) (2) (3) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) 5) Parallel use is easy. ∗1 (2) (3) (1) Gate (2) Drain (3) Source 1 BODY DIODE 6) Pb-free... |
| File Size | 751.09KB |
| Datasheet |
|
R8005ANJ : R8005ANJ Nch 800V 5A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 2.1Ω ±5A 120W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lOutline TO-263 SC-83 LPT(S) lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TL Marking R8005ANJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 800 V Continuous drain current (Tc = 25°C) ID*1 ±5 A Pulsed drain current IDP*2 ±10 A Gate - Source.
R8005ANJ : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pluse 10 A PD Total Dissipation @TC=25℃ 120 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.04 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specif.
R8005ANJFRG : R8005ANJ FRG Nch 800V 5A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 800V 2.1Ω ±5A 120W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant 5) AEC-Q101 qualified lOutline TO-263S SC-83 LPT(S) lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 24 1000 Taping code TL Marking R8005ANJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 800 V Continuous drain current (Tc = 25°C) ID*1 ±5 A Pulsed drain c.
R8005ANX : isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 5 2.4 20 PD Total Dissipation 51 Tj Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(c.