| Part Number | SUD50P06-15 |
| Manufacturer | Vishay |
| Title | P-Channel MOSFET |
| Description | www.vishay.com SUD50P06-15 Vishay Siliconix P-Channel 60 V (D-S) MOSFET TO-252 Drain connected to tab FEATURES • TrenchFET® power MOSFET • Mat... |
| Features |
• TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S D G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V ID (A) d Configuration -60 0.015 0.020 -50 Single APPLICATIONS • Load swi... |
| File Size | 227.57KB |
| Datasheet |
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SUD50P06-15 : Isc P-Channel MOSFET Transistor ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Motor contorl ·DC-DC conventers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Tc=25℃ Tc=70℃ Drain Current-Single Pulsed ±20 -50 -27.5 -80 PD Total Dissipation @TC=25℃ 113 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL.
SUD50P06-15L : SUD50P06-15L New Product Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) - 60 FEATURES ID (A) - 50 d - 50 rDS(on) (W) 0.015 @ VGS = - 10 V 0.020 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automtoive 12-V Boardnet S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information: SUD50P06-15L P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25.