isc N-Channel MOSFET
Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤2.
9mΩ ·High frequency switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·For fast switching power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
105
IDM
Drain Current-Single Pulsed
400
PD
Total Dissipation @TC=25℃
176
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rt...