isc N-Channel MOSFET
Transistor IPD65R1K4CFD,IIPD65R1K4CFD
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.
4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Fast switching ·Very high commutation ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
2.
8
IDM
Drain Current-Single Pulsed
8.
2
PD
Total Dissipation @TC=25℃
28.
4
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)...