isc N-Channel MOSFET
Transistor
IPD65R250C6,IIPD65R250C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.
25Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Very high commutation ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
16.
1
IDM
Drain Current-Single Pulsed
46
PD
Total Dissipation @TC=25℃
208
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case ...