isc N-Channel MOSFET
Transistor IPP051N15N5,IIPP051N15N5
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.
1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION · Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
120
IDM
Drain Current-Single Pulsed
480
PD
Total Dissipation @TC=25℃
300
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACT...