isc N-Channel MOSFET
Transistor
IPP60R280P6,IIPP60R280P6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.
28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Provide all benefits of a fast switching super junction MOS while not
sacrificing ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
13.
8
IDM
Drain Current-Single Pulsed
39
PD
Total Dissipation @TC=25℃
104
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V...