isc N-Channel MOSFET
Transistor
IPP65R095C7,IIPP65R095C7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.
095Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Provide all benefits of a fast switching super junction MOSFET
offering better efficiency,reduced gate charge,easy implementation and outstanding reliability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
24
IDM
Drain Current-Single Pulsed
100
PD
Total Dissipation @TC=25℃
128
Tj
Max.
Operating Junct...