isc N-Channel MOSFET
Transistor
IPP65R110CFD，IIPP65R110CFD
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.
11Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while offering
an extremely fast and robust body diode
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
31.
2
IDM
Drain Current-Single Pulsed
99.
6
PD
Total Dissipation @TC=25℃
277.
8
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperatur...