isc N-Channel MOSFET
Transistor IPP147N12N3,IIPP147N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤14.
7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
120
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
56
IDM
Drain Current-Single Pulsed
224
PD
Total Dissipation @TC=25℃
107
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTE...