IRF710-713 / MTP2N35 / 2N40 N-Channel Power MOSFETs, 2.
25 A, 350-400V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits.
z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-220AB IRF711 IRF712 IRF713 MTP2N35 MTP2N40 Maximum Ratings Symbol VDSS VDGR VGS TJ,Tsgt TL Characteristic Drain to Source Voltage1 Drain to Gate Voltage1 RGS=20k Ω Gate to Source Voltage ...

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