isc N-Channel MOSFET
Transistor
IRFB3306,IIRFB3306
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.
2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·High efficiency synchronous rectification in SMPS ·Uninterrruptible power supply ·High speed power switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
110
IDM
Drain Current-Single Pulsed
620
PD
Total Dissipation @TC=25℃
230
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175...