isc N-Channel MOSFET
Transistor
IRFB4321,IIRFB4321
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤15mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
85
UNIT V V A
IDM
Drain Current-Single Pulsed
330
A
PD
Total Dissipation @TC=25℃
350
W
Tj
Max.
Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·THER...