isc N-Channel MOSFET
Transistor
IRFB7546,IIRFB7546
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤7.
3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Synchronous Rectifier applications ·Resonant mode power supplies ·Battery powered circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
75
IDM
Drain Current-Single Pulsed
300
PD
Total Dissipation @TC=25℃
99
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
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