isc N-Channel MOSFET
Transistor
IRFP3306，IIRFP3306
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.
2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
120
IDM
Drain Current-Single Pulsed
620
PD
Total Dissipation @TC=25℃
220
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage T...