isc N-Channel MOSFET
Transistor
IRFP4004,IIRFP4004
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.
7mΩ ·Enhancement mode:
Vth =2.
0 to 4.
0V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
40
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
195
IDM
Drain Current-Single Pulsed
1390
PD
Total Dissipation @TC=25℃
380
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temper...