| Part Number | IXTP26P10T |
| Manufacturer | IXYS |
| Title | Power MOSFET |
| Description | TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD... |
| Features |
International Standard Packages Avalanche Rated Extended FBSOA Fast Intrinsic Diode Low RDS(ON) and QG Advantages Easy to Mount Space Savings High Power Density Applications High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators B... |
| File Size | 285.29KB |
| Datasheet |
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IXTP26P10T : ·High side switching ·Push pull amplifiers ·Current regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous -26 IDM Drain Current-Single Pulsed -80 PD Total Dissipation @TC=25℃ 150 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.83 62 UNIT ℃/W ℃/W IXTP26P10T isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTE.