OptiMOS&!Power-
Transistor
Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS(on) product (FOM) %!Superior thermal resistance %!175°C operating temperature % Avalanche rated % dv/dt rated
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SPD50N03S2-07 G
Product Summary
VDS
30 V
RDS(on) 7.
3 m"
ID
50 A
Ph-TO252-3
Type
Package
SPD50N03S2-07 L Ph-TO252-3
Marking PN0307
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=50 A , VDD=25V, RGS=25"
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=50A, VDS=24V, di/dt=200A/µs, Tj...