isc N-Channel MOSFET
Transistor
SPP04N80C3，ISPP04N80C3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤1.
3Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
4
IDM
Drain Current-Single Pulsed
12
PD
Total Dissipation @TC=25℃
63
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·...