isc N-Channel MOSFET
Transistor
STB15NM60ND
DESCRIPTION ·Drain Current: ID=14A@ TC=25℃ ·Drain Source Voltage:
: VDSS= 600V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
14
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150 ℃ MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1
...