STF10NM60ND

isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.6Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM...