isc P-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.
15Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Be designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-25
IDM
Drain Current-Single Pulsed
-100
PD
Total Dissipation
150
Tj
Max.
Operating Junction Temperature
...