2SK2050

2SK2050 : 2SK2050 F-III Series Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 100V 0,055Ω 30A 80W Outline Drawing Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 100 100 30 120 ±20 80 150 -55 ~ +150 Unit V V A A V W °C °C Equivalent Circ.

2SK2051-L : .

2SK2051-S : .

2SK2052 : ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 10 A ID(puls) Pulsed Drain Current 40 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Ju.

2SK2052-R : .

2SK2053 : DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2053 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2053 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DIMENSIONS (in mm) 5.7 ±0.1 2.0 ±0.2 1.5 ±0.1 3.65 ±0.1 FEATURES • New package intermediate between small signal and power types • Gate can be driven by 1.5 V • Low ON resistance RDS(on) = 0.40 Ω MAX. @ VGS = 1.5 V, ID = 1.0 A RDS(on) = 0.12 Ω MAX. @ VGS = 4.0 V, ID = 2.5 A EQUIVALENT CURCUIT Drain (D) 1.0 S 0.5 ±0.1 D 0.85 ±0.1.

2SK2054 : DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2054 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2054 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. PACKAGE DIMENSIONS (in mm) 5.7 ±0.1 2.0 ±0.2 1.5 ±0.1 3.65 ±0.1 FEATURES • New package intermediate between small-signal and power models • Can be directly driven by output of 5-V IC • Low ON resistance RDS(on) = 0.25 Ω MAX. @VGS = 4 V, ID = 1.5 A RDS(on) = 0.20 Ω MAX. @VGS = 10 V, ID = 1.5 A 1.0 0.5 ±0.1 S D 0.85 .

2SK2055 : DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2055 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2055 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. PACKAGE DIMENSIONS (in mm) 5.7 ±0.1 2.0 ±0.2 1.5 ±0.1 3.65 ±0.1 FEATURES • New package intermediate between small-signal and power models • Can be directly driven by output of 5-V IC • Low ON resistance RDS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A 1.0 0.5 ±0.1 S D 0.85 .

2SK2056 : ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulsed Drain Current 16 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK2056 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfe.

2SK2057 : ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 20 A ID(puls) Pulsed Drain Current 80 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to C.

2SK2057 : .

2SK2058 : .

2SK2059 : 2SK2059(L), 2SK2059(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK2059(L), 2SK2059(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 3 6 3 20 150 –55 to +.

2SK2059L : 2SK2059(L), 2SK2059(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK2059(L), 2SK2059(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 3 6 3 20 150 –55 to +.

2SK2059S : 2SK2059(L), 2SK2059(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK2059(L), 2SK2059(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 3 6 3 20 150 –55 to +.

2SK2059S : SMD Type Silicon N-Channel MOSFET 2SK2059S IC MOSFET Features Low on-resistance High speed switching No Secondary Breakdown +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm Suitable for Switching regulator, DC - DC converter +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID PD Tch Tstg Rating 600 30 3 20 150 -55 to +150 Unit V V A W Electrical Charact.