IRFAC32

IRFAC30 : isc N-Channel Mosfet Transistor IRFAC30 ·FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3.6 A IDM Drain Current-Single Plused 14 A Ptot Total Dissipation@TC=25℃ 75.

IRFAC30 : PD -90513 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRFAC30   IRFAC30 600V, N-CHANNEL BVDSS 600V RDS(on) 2.2Ω ID 3.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stabilit.