isc Silicon
NPN Power
Transistors
DESCRIPTION ·Collector-Emitter Saturation Voltage-
: VCE(sat) = 0.
36V(Max.
)@IC= 6A ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 50V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Relay drivers,lamp drivers,motor drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
VEBO IC ICM IB PC Tj
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current Collector Power Dissipation TC=25℃ Max.
Junction Temperature
Tstg
Storage Ttemperature Range
50
V
5
V
10
A
13
A
2
A
25
W
150
...