| Part Number | DMN95H8D5HCT |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 950V(Min) ·Fast Switching Speed ·100% av... |
| Features |
·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 950V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU... |
| File Size | 254.18KB |
| Datasheet |
|
DMN95H8D5HCT : This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications Motor Control Backlighting DC-DC Converters Power Management Functions Features Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: TO220AB (Type TH) Case Material: Molded Plastic, “Green” Molding Compound, UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Conn.
DMN95H8D5HCTI : This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. Features Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Applications Motor Control Backlighting DC-DC C.
DMN95H8D5HCTI : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 950 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 3 A PD Total Dissipation @TC=25℃ 30 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.2 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spe.