isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃ Tc=100℃
37 24
A
IDM
Drain Current-Single Pulsed
111
A
PD
Total Dissipation
357
W
Tj
Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL...