isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 38mΩ(Max)@VGS=10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
90
A
IDM
Drain Current-Single Plused
200
A
PD
Total Dissipation @TC=25℃
1100
W
Tj
Max.
Operating Junction Temperature
-55~150 ℃
Tstg
...