isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static drain-source on-resistance:
RDS(on) ≤ 450mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·Switched mode power supplies ·DC-DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
8
IDM
Drain Current-Single Pulsed
16
PD
Total Dissipation @TC=25℃
150
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·T...