| Part Number | IXTA2N80P |
| Manufacturer | IXYS |
| Title | Power MOSFET |
| Description | PolarTM Power MOSFET IXTU2N80P IXTY2N80P IXTA2N80P VDSS = ID25 = RDS(on) 800V 2A 6 N-Channel Enhancement Mode IXTP2N80P TO-251 (IXTU) Av... |
| Features |
International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages High Power Density Easy to Mount Space Savings BVDSS VGS = 0V, ID = 250μA 800 V Applications VGS(th) IGSS IDSS RDS(on) VDS = VGS, ID = 50μA VGS = 30V, VDS = 0V ... |
| File Size | 832.70KB |
| Datasheet |
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IXTA2N80 : Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V = 2 A = 6.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ±20 ±30 2 8 2 V V V V A A A mJ mJ V/ns W °C °C °C Nm/lb.in. 4 300 g °C TO-220AB (IXTP) GD S D (TAB) TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 6 200 5 54 -55 ... +150 150 -55 ... +150 G S D (TAB) G = Gate, S = Source, D .
IXTA2N80 : isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.2Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 2 IDM Drain Current-Single Pulsed 8 PD Total Dissipation @TC=25℃ 54 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·.
IXTA2N80P : isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 2 IDM Drain Current-Single Pulsed 4 PD Total Dissipation @TC=25℃ 70 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·TH.