iscN-Channel MOSFET
Transistor
TK7A45DA
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 1.
35Ω (MAX) ·Enhancement mode:
Vth = 2.
4 to 4.
4V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
450
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
6.
5
A
IDM
Drain Current-Single Pulsed
26
A
PD
Total Dissipation @TC=25℃
35
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETE...