iscN-Channel MOSFET
Transistor
TK6R7P06PL
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 6.
7mΩ (MAX) (VGS = 10 V) ·Enhancement mode:
Vth = 1.
5 to 2.
5V (VDS = 10 V, ID=0.
3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
46
A
IDM
Drain Current-Single Pulsed
190
A
PD
Total Dissipation @TC=25℃
66
W
Tj
Max.
Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
S...