Isc N-Channel MOSFET
Transistor
TK35N65W
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 55mΩ (MAX) ·Enhancement mode:
Vth = 2.
5 to 3.
5V (VDS = 10 V, ID=2.
1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
49.
2
A
IDM
Drain Current-Single Pulsed
196
A
PD
Total Dissipation @TC=25℃
400
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARA...